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Publisher Correction: Characterization of SnO2 Thin Films deposited with SILAR: Effect of Annealing on Physical Properties (Brazilian Journal of Physics, (2026), 56, 4, (168), 10.1007/s13538-026-02087-7)Taşdemirci, Tuba ÇayırPhysics, MultidisciplinaryPhysicsDuring the correction process, parts of Fig. 4 were inadvertently deleted. Following is the complete figure: (Figure presented.) Fig. 4 SEM-EDAX images of SnO2 thin films as grown, annealed at 250 °C, 300 °C and 350 °C © The Author(s) under exclusive licence to Sociedade Brasileira de Física 2026.Springer2026Correctionhttps://rdlopen.rawdatalibrary.net/r/ebyu/10266https://doi.org/10.1007/s13538-026-02099-30103-9733enBrazilian Journal of Physicsinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/10266