<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-19T00:02:47Z</responseDate><request verb="GetRecord" identifier="oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/10439" metadataPrefix="oai_dc">https://ebyu-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/10439</identifier><datestamp>2026-10-18T20:25:39Z</datestamp><setSpec>openaire</setSpec><setSpec>driver</setSpec><setSpec>com_ebyu_10000</setSpec><setSpec>col_ebyu_10001</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>Hybrid Plasma–GaNSemiconductor Trigger Switch for Ultra-fast High-power Pulsed Applications: a Numerical Study</dc:title><dc:creator>Can, Erol</dc:creator><dc:subject>Electric discharges</dc:subject><dc:subject>Electric power systems</dc:subject><dc:subject>Energy transfer</dc:subject><dc:subject>Gallium nitride</dc:subject><dc:subject>Plasma diagnostics</dc:subject><dc:subject>Semiconducting gallium compounds</dc:subject><dc:subject>Semiconductor switches</dc:subject><dc:subject>Deterministics</dc:subject><dc:subject>Discharge channel</dc:subject><dc:subject>GaN based</dc:subject><dc:subject>High power</dc:subject><dc:subject>High-current plasmas</dc:subject><dc:subject>Hybrid plasma</dc:subject><dc:subject>Low pressures</dc:subject><dc:subject>Numerical investigations</dc:subject><dc:subject>Spark discharge</dc:subject><dc:subject>Ultra-fast</dc:subject><dc:subject>III-V semiconductors</dc:subject><dc:description>Abstract: This study presents a numerical investigation of a Hybrid Plasma–Semiconductor Trigger Switch (HPTS) combining a GaN-based driver with a low-pressure pseudo-spark discharge channel. The objective is to evaluate the potential of integrating deterministic semiconductor switching with high-current plasma conduction for pulsed-power applications. A dynamic simulation model was developed to capture the interaction between time-dependent plasma conductivity, GaN driver dynamics, and circuit parasitics. Simulated results indicate that the HPTS can achieve sub-nanosecond jitter (less than 0.5 ns), bidirectional current conduction up to ±17 kA, and current rise rates of 300–400 A/ns. Performance is shown to improve with lower discharge pressures and faster driver rise. Comparative analysis with reported experimental data for thyratron and pseudo-spark switches demonstrates that the simulated HPTS achieves faster switching, higher timing precision, and improved energy transfer efficiency (96–97%). These findings highlight the potential of HPTS architectures for high-speed pulsed-power systems, while clarifying that the reported results are derived from numerical simulations rather than physical experiments. © Pleiades Publishing, Ltd. 2026.</dc:description><dc:publisher>Pleiades Publishing</dc:publisher><dc:date>2026</dc:date><dc:type>Article</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/ebyu/10439</dc:identifier><dc:identifier>https://doi.org/10.1134/s002044122670034x</dc:identifier><dc:identifier>0020-4412</dc:identifier><dc:language>en</dc:language><dc:relation>Instruments and Experimental Techniques</dc:relation><dc:rights>info:eu-repo/semantics/openAccess</dc:rights><dc:type>info:eu-repo/semantics/article</dc:type><dc:identifier>https://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/10439</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>