2026-10-19T01:04:06Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/requestoai:ebyu-rdlopen.rawdatalibrary.net:ebyu/117642026-10-18T20:49:50Zopenairedrivercom_ebyu_10000col_ebyu_10001Effect of Substrate Temperature on Structural, Morphological, and Optical Properties of Gallium Oxide Thin Films Deposited by RF-SputteringYildiz, FevkaniAkcay, HulyaAstam, AykutKundakci, MutluGallium oxideNano structureSputterThin filmGallium compoundsITO glassMagnetron sputteringNanocomposite thin filmsNanocrystalsOptical depthOptical filmsGallium oxidesNano-structuresOptical-Oxide thin filmsP-type siliconPropertySilicon substratesSubstrates temperatureThin-filmsThin filmsIn this paper, gallium oxide (Ga2O3) thin films at various substrate temperatures (Ts) were grown on Indium Tin Oxide (ITO), glass, p-type silicon by radio-frequency magnetron sputtering (RFMS). We investigated how structural, morphological and optical properties change with various Ts. XRD results of thin films grown on p-type silicon substrate suggest that crystallinity properties of synthesized thin films strongly depend on the Ts. From SEM and AFM analyses of Ga2O3 thin films grown on p-type silicon substrate, it was observed that when the temperature increased, a porous structure appeared, and the grain size changed depending on the Ts. Moreover, obtained results from the absorption measurements, the bandgap energy of Ga2O3 thin films grown on the p-type silicon substrate decreased with increasing substrate temperature. © 2024, Gazi Universitesi. All rights reserved.Gazi Universitesi2024Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/11764https://doi.org/10.35378/gujs.12750662147-1762enGazi University Journal of Scienceinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/11764