<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-19T00:02:36Z</responseDate><request verb="GetRecord" identifier="oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/13099" metadataPrefix="oai_dc">https://ebyu-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/13099</identifier><datestamp>2026-10-18T20:36:34Z</datestamp><setSpec>openaire</setSpec><setSpec>driver</setSpec><setSpec>com_ebyu_10000</setSpec><setSpec>col_ebyu_10001</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures</dc:title><dc:creator>Catir, Fulya Esra Cimilli</dc:creator><dc:creator>Saglam, Mustafa</dc:creator><dc:contributor>Z., Caldiran</dc:contributor><dc:contributor>O.F., Yuksel</dc:contributor><dc:contributor>S., Aydogan</dc:contributor><dc:contributor>A., Turut</dc:contributor><dc:subject>Barrier inhomogeneities</dc:subject><dc:subject>Capacitance-voltage characteristics</dc:subject><dc:subject>Current-voltage characteristics</dc:subject><dc:subject>Norde (F-V) functions</dc:subject><dc:subject>Thermal annealing</dc:subject><dc:subject>Aluminum compounds</dc:subject><dc:subject>Annealing</dc:subject><dc:subject>Capacitance</dc:subject><dc:subject>Diodes</dc:subject><dc:subject>Electric resistance</dc:subject><dc:subject>III-V semiconductors</dc:subject><dc:subject>Indium phosphide</dc:subject><dc:subject>Liquefied gases</dc:subject><dc:subject>Schottky barrier diodes</dc:subject><dc:subject>Semiconducting indium phosphide</dc:subject><dc:subject>Annealing effects</dc:subject><dc:subject>Barrier heights</dc:subject><dc:subject>Lows-temperatures</dc:subject><dc:subject>Norde (F-V) function</dc:subject><dc:subject>Schottky diodes</dc:subject><dc:subject>Thermal-annealing</dc:subject><dc:subject>V function</dc:subject><dc:subject>Current voltage characteristics</dc:subject><dc:description>In this study, Schottky contacts have been fabricated on n-InP (1 0 0) using an Al/n-InP/In configuration. The current voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-InP/In Schottky diodes were calculated from the liquid nitrogen temperature to the room temperature by steps of 10 K before annealing of this structure and after annealing at 400 °C for 3 min. The series resistance, ideality factor and barrier height values calculated using I-V characteristics, Cheung functions, Norde (F-V) functions, and C-V characteristics before and after annealing the contact and compared for each temperature. These measurements clearly showed that the Al/n-InP/In Schottky diode became extremely stable due to the annealing process and the mean barrier height value have been increased from 0,494 to 0,674 eV after thermal annealing at 400 °C. In addition, temperature dependent barrier height values of as-fab. and annealed (at 400 °C) Al/n-InP/InSchottky contacts are consistent with "the barrier inhomogeneous model" of Schottky diodes. © 2021 Elsevier Ltd. All rights reserved.</dc:description><dc:publisher>Elsevier Ltd</dc:publisher><dc:date>2021</dc:date><dc:type>Conference Object</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/ebyu/13099</dc:identifier><dc:identifier>https://doi.org/10.1016/j.matpr.2021.03.275</dc:identifier><dc:identifier>2214-7853</dc:identifier><dc:language>en</dc:language><dc:relation>Materials Today: Proceedings</dc:relation><dc:rights>info:eu-repo/semantics/openAccess</dc:rights><dc:type>info:eu-repo/semantics/conferenceObject</dc:type><dc:identifier>https://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/13099</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>