2026-10-19T00:02:02Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/requestoai:ebyu-rdlopen.rawdatalibrary.net:ebyu/140452026-10-18T20:36:34Zopenairedrivercom_ebyu_10000col_ebyu_10001A novel OTA-based circuit model corroborated by an experimental semiconductor memristorGul, FatihBabacan, YunusMemristorMemristor emulatorOTAZinc oxideCircuit simulationII-VI semiconductorsMagnetic semiconductorsOperational amplifiersOxide semiconductorsReactive sputteringScanning electron microscopySemiconducting zinc compoundsTiming circuitsWide band gap semiconductorsX ray powder diffractionCircuit applicationDirect currentMemristive behaviorOperational transconductance amplifiers (OTA)OTA-based circuitTime-dependent currentsZnO thin filmMemristorsA semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented. © 2018Elsevier B.V.2018Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/14045https://doi.org/10.1016/j.mee.2018.03.0120167-9317enMicroelectronic Engineeringinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/14045