2026-10-19T00:01:58Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/requestoai:ebyu-rdlopen.rawdatalibrary.net:ebyu/140992026-10-18T20:39:03Zopenairedrivercom_ebyu_10000col_ebyu_10001Low-level NO gas sensing properties of Zn1-xSnxO nanostructure sensors under UV light irradiation at room temperatureKaraduman Er, IrmakÇağirtekin, Ali OrkunÇorlu, TuğbaYildirim, Memet AliAteş, AytunçAcar, SelimGas sensorSn-doped ZnO nanostructuresUV light irradiationChemical detectionChemical sensorsEnergy dispersive X ray analysisGas detectorsII-VI semiconductorsIrradiationNanostructuresOxide mineralsScanning electron microscopyX ray diffraction analysisZinc oxideCompositional propertiesGas sensor materialsLow concentration levelsNo gas sensingSensor responseSn-doped ZnOSuccessive ionic layer adsorption and reactionsUV-light irradiationGasesZn1-xSnxO (x = 0, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn0.90Sn0.10O sensor has exhibited the highest response for 20 ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn0.90Sn0.10O sensor. Zn0.90Sn0.10O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas. © Indian Academy of Sciences.Springer2019Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/14099https://doi.org/10.1007/s12034-018-1714-z0250-4707enBulletin of Materials Scienceinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/14099