2026-10-19T01:36:07Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/request

oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/141092026-10-18T20:33:58Zopenairedrivercom_ebyu_10000col_ebyu_10001

Ultra-Low voltage-power DTMOS based full-wave rectifierBabacan, YunusDTMOSFull-wave rectifierUltra low-powerUltra low-voltagePassive networksRectifying circuitsCircuit componentsDynamic threshold mos (DTMOS)Full-wave rectifiersPost layout simulationUltra low powerUltra-low power consumptionUltra-low-voltageElectric rectifiersIn this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. © 2018Elsevier GmbH2018Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/14109https://doi.org/10.1016/j.aeue.2018.04.0231434-8411enAEU - International Journal of Electronics and Communicationsinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/14109