<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-19T00:37:43Z</responseDate><request verb="GetRecord" identifier="oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/14167" metadataPrefix="oai_dc">https://ebyu-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/14167</identifier><datestamp>2026-10-18T21:12:10Z</datestamp><setSpec>openaire</setSpec><setSpec>driver</setSpec><setSpec>com_ebyu_10000</setSpec><setSpec>col_ebyu_10001</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>An operational transconductance amplifier-based memcapacitor and meminductor</dc:title><dc:creator>Babacan, Yunus</dc:creator><dc:subject>Emulator</dc:subject><dc:subject>Memcapacitor</dc:subject><dc:subject>Meminductor</dc:subject><dc:subject>OTA</dc:subject><dc:subject>Electric network analysis</dc:subject><dc:subject>Transconductance</dc:subject><dc:subject>Experimental realizations</dc:subject><dc:subject>Memristor</dc:subject><dc:subject>Operational transconductance amplifiers (OTA)</dc:subject><dc:subject>Simulation program</dc:subject><dc:subject>Operational amplifiers</dc:subject><dc:description>Previous studies have focused on the new mem-elements after the experimental realization of memristor which is the the fourth passive circuit element. This research presents a simple operational transconductance amplifier (OTA)-based memcapacitor and meminductor emulator circuit that does not comprise a mutator circuit. Each emulator was verified using the LTspice simulation program, and the simulation results were found to be compatible with the characteristic behaviors of the memcapacitor and meminductor. © Copyright 2018 by Electrica.</dc:description><dc:publisher>Istanbul University</dc:publisher><dc:date>2018</dc:date><dc:type>Article</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/ebyu/14167</dc:identifier><dc:identifier>https://doi.org/10.5152/iujeee.2018.1806</dc:identifier><dc:identifier>1303-0914</dc:identifier><dc:language>en</dc:language><dc:relation>Istanbul University - Journal of Electrical and Electronics Engineering</dc:relation><dc:rights>info:eu-repo/semantics/openAccess</dc:rights><dc:type>info:eu-repo/semantics/article</dc:type><dc:identifier>https://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/14167</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>