2026-10-19T04:51:54Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/request

oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/148562026-10-18T20:39:01Zopenairedrivercom_ebyu_10000col_ebyu_10001

Effects of graphite on the synthesis of 1-D single crystal In2O3 nanostructures at high temperatureTuzluca, Fatma NurYesilbag, Yasar OzkanAkkus, TubaErtugrul, MehmetFESEMGraphite powderHR-TEMIndium oxidePhotoluminescenceXRDChemical vapor depositionElectron microscopyField emission microscopesGold coatingsGraphiteIndiumNanostructuresScanning electron microscopySemiconducting siliconSingle crystalsX ray diffractionX ray spectroscopyChemical vapor deposition methodsField emission scanning electron microscopyMorphology and crystal structuresPhotoluminescence spectrumVapor-liquid-solid growth mechanismHigh resolution transmission electron microscopyThis study investigated the effects of graphite powder on the growth mechanisms of one-dimensional (1-D) single-crystal indium oxide (In2O3) nanostructures. The study was conducted using a chemical vapor deposition (CVD) method at 1000 °C; In2O3 and graphite powder mixed with In2O3, with a weight ratio of 1:1, were used as the source material, while 2 nm-thick n-type silicon (100), coated with a gold catalyst, was used as a substrate. It was observed that nanostructures grew via a Vapor-Liquid-Solid (VLS) growth mechanism when only In2O3 was used, but grew via both VLS and Vapor-Solid (VS) growth mechanisms when graphite powder was used with the In2O3. The morphology and crystal structures of the nanostructures grown were investigated using X-Ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HR-TEM), Field Emission Scanning Electron Microscopy (FESEM) and Energy Dispersion X-Ray Spectroscopy (EDS). At room temperature (RT), all the nanostructures showed photoluminescence (PL) spectra at a wavelength of 367 nm in the UV-emission region and at wavelengths of 470 and 630 nm in the visible region. © 2017Elsevier Ltd2017Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/14856https://doi.org/10.1016/j.mssp.2017.04.0071369-8001enMaterials Science in Semiconductor Processinginfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/14856