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Conversion of SILAR deposited Cu3Se2 thin films to Cu2-xSe by annealingAstam, AykutAkaltun, YunusYildirim, MuhammetAnnealingCopper selenidePhase transformationSILARThin filmsCopperElectromagnetic wave absorptionElectron microscopyEnergy dispersive X ray analysisEnergy gapLight absorptionNitrogenPhase transitionsRefractory alloysScanning electron microscopySemiconducting selenium compoundsSubstratesX ray analysisX ray diffractionDirect band gapGlass substratesNitrogen atmospheresOptical absorption measurementScanning electron microscopy imageX-ray diffraction studiesOptical filmsThin films of copper selenide were deposited onto glass substrates using SILAR method at room temperature and annealed at 573 K for an hour in nitrogen atmosphere. As-deposited and annealed films were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, Raman spectroscopy, and optical absorption measurements. X-ray diffraction studies revealed that annealing the films in nitrogen atmosphere led to conversion of the tetragonal Cu3Se2 phase to cubic Cu2-xSe phase. Scanning electron microscopy images showed a considerable change in the morphology of the films and energy dispersive X-ray analysis demonstrated a reduction in selenium content with annealing. Typical Raman spectra of copper selenide thin films were obtained from the as-deposited and annealed films. Using optical absorption measurements, direct band gap energies of Cu3Se2 and Cu2-xSe phases were found to be 2.72 eV and 2.15 eV, respectively. © 2015 Elsevier B.V. All rights reserved.Elsevier2016Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/15166https://doi.org/10.1016/j.matlet.2015.12.0300167-577XenMaterials Lettersinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/15166