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oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/151972026-10-18T20:36:40Zopenairedrivercom_ebyu_10000col_ebyu_10001

Effect of thickness on electrical properties of SILAR deposited SnS thin filmsAkaltun, YunusAstam, AykutCerhan, AsenaÇayir, TubaB., AkkusG.S., DoganR.B.C., MutluL.S., YalcinY., Oktemelectrical propertiessemiconductorsSnSthin filmsTin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness. © 2016 AIP Publishing LLC.American Institute of Physics Inc.2016Conference Objecthttps://rdlopen.rawdatalibrary.net/r/ebyu/15197https://doi.org/10.1063/1.4944233978-073541369-60094-243XenAIP Conference Proceedingsinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/conferenceObjecthttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/15197