<?xml version="1.0" encoding="UTF-8"?><OAI-PMH xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/ http://www.openarchives.org/OAI/2.0/OAI-PMH.xsd"><responseDate>2026-10-18T23:53:57Z</responseDate><request verb="GetRecord" identifier="oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/15748" metadataPrefix="oai_dc">https://ebyu-rdlopen.rawdatalibrary.net/oai/request</request><GetRecord><record><header><identifier>oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/15748</identifier><datestamp>2026-10-18T20:41:31Z</datestamp><setSpec>openaire</setSpec><setSpec>driver</setSpec><setSpec>com_ebyu_10000</setSpec><setSpec>col_ebyu_10001</setSpec></header><metadata><oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd"><dc:title>Zinc concentration effect on structural, optical and electrical properties of Cd 1-xZn xSe thin films</dc:title><dc:creator>Akaltun, Yunus</dc:creator><dc:creator>Yildirim, M. Ali</dc:creator><dc:creator>Ateş, Aytunç</dc:creator><dc:creator>Yildirim, Muhammet</dc:creator><dc:subject>A. Chalcogenides</dc:subject><dc:subject>B. Chemical synthesis</dc:subject><dc:subject>D. Dielectric properties</dc:subject><dc:subject>D. Optical properties</dc:subject><dc:subject>Adsorption</dc:subject><dc:subject>Chalcogenides</dc:subject><dc:subject>Dielectric properties</dc:subject><dc:subject>Energy gap</dc:subject><dc:subject>Refractive index</dc:subject><dc:subject>Scanning electron microscopy</dc:subject><dc:subject>Semiconducting selenium compounds</dc:subject><dc:subject>Substrates</dc:subject><dc:subject>Thin films</dc:subject><dc:subject>Vapor deposition</dc:subject><dc:subject>X ray diffraction</dc:subject><dc:subject>Ambient pressures</dc:subject><dc:subject>Bowing parameters</dc:subject><dc:subject>Chemical synthesis</dc:subject><dc:subject>Electron effective mass</dc:subject><dc:subject>Energy bandgaps</dc:subject><dc:subject>Energy dispersive x-ray</dc:subject><dc:subject>Glass substrates</dc:subject><dc:subject>High-frequency dielectrics</dc:subject><dc:subject>Optical and electrical properties</dc:subject><dc:subject>Polycrystalline</dc:subject><dc:subject>Resistivity values</dc:subject><dc:subject>Room temperature</dc:subject><dc:subject>Successive ionic layer adsorption and reactions</dc:subject><dc:subject>Zinc concentration</dc:subject><dc:subject>Zinc</dc:subject><dc:description>Cd 1-xZn xSe thin films with different compositions (x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0) were deposited on glass substrates using successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. The zinc concentration (x) effect on the structural, morphological, optical and electrical properties of Cd 1-xZn xSe thin films were investigated. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) studies showed that all the films exhibited polycrystalline nature and were covered well on glass substrates. The energy dispersive X-ray (EDAX) analysis confirmed nearly stoichiometric deposition of the films. The energy bandgap values were changed from 1.99 to 2.82 eV depending on the zinc concentration. Bowing parameter was calculated as 0.08 eV. The electron effective mass (m e*/m o), refractive index (n), optical static and high frequency dielectric constants (ε o, ε ∞) values were calculated by using the energy bandgap values as a function of the zinc concentration. The resistivity values of the films changed between 10 5 and 10 7 Ω cm with increasing zinc concentration at room temperature. © 2012 Elsevier Ltd. All rights reserved.</dc:description><dc:publisher>PERGAMON-ELSEVIER SCIENCE LTD</dc:publisher><dc:date>2012</dc:date><dc:type>Article</dc:type><dc:identifier>https://rdlopen.rawdatalibrary.net/r/ebyu/15748</dc:identifier><dc:identifier>https://doi.org/10.1016/j.materresbull.2012.07.018</dc:identifier><dc:identifier>0025-5408</dc:identifier><dc:language>en</dc:language><dc:relation>Materials Research Bulletin</dc:relation><dc:rights>info:eu-repo/semantics/openAccess</dc:rights><dc:type>info:eu-repo/semantics/article</dc:type><dc:identifier>https://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/15748</dc:identifier></oai_dc:dc></metadata></record></GetRecord></OAI-PMH>