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Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edgeErzeneoǧlu, S.Içelli, O.Gürbulak, B.Ateş, A.Energy dispersive X-ray spectrometryMass attenuation coefficientsSemiconductorsAttenuationConcentration (process)CrystalsEnergy dispersive spectroscopyHolmiumSemiconductor dopingX ray spectrometersmassspectrometryAbsorption edgeBridgman-Strocbarger methodSemiconducting indium compoundsThe mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology. © 2005 Elsevier Ltd. All rights reserved.2006Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/16040https://doi.org/10.1016/j.jqsrt.2005.06.0010022-4073enJournal of Quantitative Spectroscopy and Radiative Transferinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/16040