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oai:ebyu-rdlopen.rawdatalibrary.net:ebyu/160902026-10-18T20:39:09Zopenairedrivercom_ebyu_10000col_ebyu_10001

An experimental study on the linear differential scattering coefficients of the GaAs, n- and p-type SiIçelli, OrhanÇankaya, GüvenÇetin, AhmetLinear differential scattering coefficientMolecular scattering cross-sectionX-ray fluorescence spectrometryEnergy dispersive spectroscopyFluorescenceFluorescence spectroscopyGallium arsenideIII-V semiconductorsSemiconducting galliumSemiconducting gallium arsenideX raysDifferential scatteringEnergy dispersive X-ray fluorescenceMolecular scatteringP-type SiScattering anglesTheoretical valuesX ray fluorescence spectrometrySilicon wafersThe linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature. © 2009 Elsevier B.V. All rights reserved.Elsevier2009Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/16090https://doi.org/10.1016/j.nima.2009.04.0050168-9002enNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipmentinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/16090