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Mass attenuation coefficients for n-type InSe, InSe:Gd, InSe:Ho and InSe:Er single crystalsIçelliI, OrhanErzeneoǧlu, SalihGürbulak, BekirCrystal growthMass attenuation coefficientsTransmission methodDispersionsDoping (additives)FluorescenceIndiumX ray analysiscrystallizationEnergy regionsStochbarger methodAttenuationMeasurements have been made to determine the mass attenuation coefficients of undoped n-type InSe, and Gd, Ho, Er doped n-InSe single crystals using a Si(Li) detector in the energy region 15.746-40.930 keV X-ray energies with energy dispersive X-ray fluorescence systems. InSe, InSe:Gd, InSe:Ho and InSe:Er single crystals were grown by using the stockbarger method. The measured values are graphically compared with the theoretical ones obtained using WinXcom. © 2004 Elsevier Ltd. All rights reserved.2005Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/16115https://doi.org/10.1016/j.jqsrt.2004.04.0120022-4073enJournal of Quantitative Spectroscopy and Radiative Transferinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/16115