2026-10-19T01:05:37Zhttps://ebyu-rdlopen.rawdatalibrary.net/oai/requestoai:ebyu-rdlopen.rawdatalibrary.net:ebyu/161672026-10-18T20:30:58Zopenairedrivercom_ebyu_10000col_ebyu_10001The electrical characteristics of Cu/CuS/p-Si/Al structureAteş, A.Saǧlam, M.Güzeldir, B.Yildirim, M.A.Astam, A.CoatingsElectrical propertiesInterfacesMultilayerThin filmsAluminum compoundsBias voltageElectric propertiesElectric resistanceFilm preparationInterface statesInterfaces (materials)Multilayer filmsMultilayersSiliconSilicon compoundsCurrent voltage curveDensity distributionsElectrical characteristicHigh current densitiesMulti-layer devicesRectifying behaviorsSeries resistance effectsSuccessive ionic layer adsorption and reactionsCopper compoundsCu/CuS/p-Si/Al structure formed using CuS thin film on p-Si substrate. CuS thin film has been grown with using Successive Ionic Layer Adsorption and Reaction (SILAR) method. The Cu/CuS/p-Si/Al structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves studied at room temperature. The characteristic parameters such as barrier height, ideality factor and series resistance of Cu/CuS/p-Si/Al structure have been calculated from the forward bias I-V and reverse bias C-2-V characteristics. The ideality factor and barrier height have been obtained as n=1.63 and Φb=0.69 eV by applying a thermo-ionic emission theory. At high current densities in the forward direction, the series resistance effect has been observed. The values of Rs obtained from dV/d(lnI) - I and H(I) - I plots are near to each others (Rs=340.33 □ and R s=346.24 □, respectively). In the same way, the barrier height calculated from C-2-V characteristics have been varied from 0.523 to 0.601 eV. Furthermore, the density distribution of interface states of the multilayer device has been obtained from the semi-log forward bias I-V characteristics. It has been seen that the Nss has almost an exponential rise with bias voltage from top of the valance band toward to mid gap.National Institute of Optoelectronics2010Articlehttps://rdlopen.rawdatalibrary.net/r/ebyu/161671454-4164enJournal of Optoelectronics and Advanced Materialsinfo:eu-repo/semantics/openAccessinfo:eu-repo/semantics/articlehttps://ebyu-rdlopen.rawdatalibrary.net/tr/items/ebyu/16167