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Barrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer

ArticleAçık Erişim

Özet

In the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer. © 2018, Indian Association for the Cultivation of Science.

Anahtar Kelimeler

72.20.-i73.22.Pr73.30. + y73.40.SxBand gapGraphene oxideMIS diodeThin filmsX-ray diffraction
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/13591Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1007/s12648-018-1311-4Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorGullu, Omer
dc.contributor.authorCankaya, Murat
dc.contributor.authorRajagopal Reddy, V.
dc.date.accessioned2026-10-18T20:28:25.458510737Z
dc.date.available2026-10-18T20:28:25.458510737Z
dc.date.issued2019
dc.description.abstractIn the present work, the surface morphology, structural and optical features of graphene oxide (GO) films are investigated. The Al/GO/n-InP MIS diode is formed by depositing GO layer on n-InP wafer for the barrier enhancement. Interfacial properties of the MIS diode with GO interlayer are extracted from current–voltage (I–V) measurement. The simple diode parameters such as barrier height and ideality factor are extracted from I–V plots, and the values are compared with those of conventional Al/n-InP MS contact. The value of barrier height (BH) for the Al/GO/n-InP contact is found as 0.85 eV. The BH value of 0.85 eV of the Al/GO/n-InP MIS structure is as high as around 100% compared to the value of 0.43 eV of the Al/n-InP reference contacts. We have showed that the value of 0.85 eV is one of the highest values presented for reference contacts with an interlayer. © 2018, Indian Association for the Cultivation of Science.
dc.description.sponsorshipAcknowledgements This study is partly supported by Republic of Turkey Prime Ministry State Planning organization (DPT) (Project Number: 2010K120610, Batman University Central Research Laboratory).
dc.identifier.doi10.1007/s12648-018-1311-4
dc.identifier.eissn0974-9845
dc.identifier.endpage474
dc.identifier.issn0973-1458
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85064002953
dc.identifier.startpage467
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/13591
dc.identifier.volume93
dc.identifier.wosWOS:000463675100006
dc.language.isoen
dc.publisherScientific Publishers
dc.relation.ispartofIndian Journal of Physics
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subject72.20.-i
dc.subject73.22.Pr
dc.subject73.30. + y
dc.subject73.40.Sx
dc.subjectBand gap
dc.subjectGraphene oxide
dc.subjectMIS diode
dc.subjectThin films
dc.subjectX-ray diffraction
dc.titleBarrier enhancement of Al/n-InP Schottky diodes by graphene oxide thin layer
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus7
rdl.citation.wos5
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)