Memristor-based sodium and potassium channels model

Conference ObjectAçık Erişim

Özet

Emulation of known neural behavior is difficult because of the highly complex. The Hodgkin-Huxley model that was developed by Alan Lloyd Hodgkin and Andrew Fielding Huxley explains how to the membrane potentials are conducted from one cell to another cell through the axon. Memristor have attracted great interest for various applications recently. The most interesting application of memristors is neural systems. In this paper, two different special memristor models based Hodgkin-Huxley (HH) circuit are presented. The memristor models are developed using TiO2 memristor mathematical model to emulate sodium and potassium channels and obtained voltage spikes train applying DC input current. Finally, the conductance characteristics of the developed special memristors are presented to obtain spikes train. © 2017 EMO (Turkish Chamber of Electrical Enginners).

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Tam Kayıt
AlanDeğerDil
dc.contributor.authorBabacan, Yunus
dc.contributor.authorKacar, Firat
dc.contributor.authorYildirim, Melih
dc.date.accessioned2026-10-18T20:29:22.343685244Z
dc.date.available2026-10-18T20:29:22.343685244Z
dc.date.issued2017
dc.description.abstractEmulation of known neural behavior is difficult because of the highly complex. The Hodgkin-Huxley model that was developed by Alan Lloyd Hodgkin and Andrew Fielding Huxley explains how to the membrane potentials are conducted from one cell to another cell through the axon. Memristor have attracted great interest for various applications recently. The most interesting application of memristors is neural systems. In this paper, two different special memristor models based Hodgkin-Huxley (HH) circuit are presented. The memristor models are developed using TiO2 memristor mathematical model to emulate sodium and potassium channels and obtained voltage spikes train applying DC input current. Finally, the conductance characteristics of the developed special memristors are presented to obtain spikes train. © 2017 EMO (Turkish Chamber of Electrical Enginners).
dc.identifier.endpage605
dc.identifier.isbn978-605010737-1
dc.identifier.scopus2-s2.0-85046265107
dc.identifier.startpage602
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/14566
dc.identifier.volume2018-January
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers Inc.
dc.relation.ispartof2017 10th International Conference on Electrical and Electronics Engineering, ELECO 2017
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectPotassium
dc.subjectSodium
dc.subjectTitanium dioxide
dc.subjectChannel modelling
dc.subjectHodgkin-Huxley models
dc.subjectMembrane potentials
dc.subjectMemristor
dc.subjectModel-based OPC
dc.subjectNeural systems
dc.subjectPotassium channels
dc.subjectSodium channel
dc.subjectSpike train
dc.subjectVoltage spikes
dc.subjectMemristors
dc.titleMemristor-based sodium and potassium channels model
dc.typeConference Object
dspace.entity.typePublication
rdl.citation.scopus1
rdl.source.indexSCOPUS