Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

Erzeneoǧlu, S.; Içelli, O.; Gürbulak, B.; Ateş, A.

doi:10.1016/j.jqsrt.2005.06.001

Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge

ArticleAçık Erişim

Özet

The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology. © 2005 Elsevier Ltd. All rights reserved.

Anahtar Kelimeler

Energy dispersive X-ray spectrometry Mass attenuation coefficients Semiconductors Attenuation Concentration (process)Crystals Energy dispersive spectroscopy Holmium Semiconductor doping X ray spectrometers mass spectrometry Absorption edge Bridgman-Strocbarger method Semiconducting indium compounds

RDL Kalıcı Bağlantı (PID)

https://rdlopen.rawdatalibrary.net/r/ebyu/16040Resmi atıflarda kullanılan kalıcı adres

DOI

https://doi.org/10.1016/j.jqsrt.2005.06.001Yayıncı resmi DOI adresi

Tam Kayıt

Alan	Değer	Dil
dc.contributor.author	Erzeneoǧlu, S.
dc.contributor.author	Içelli, O.
dc.contributor.author	Gürbulak, B.
dc.contributor.author	Ateş, A.
dc.date.accessioned	2026-10-18T20:30:52.667873488Z
dc.date.available	2026-10-18T20:30:52.667873488Z
dc.date.issued	2006
dc.description.abstract	The mass attenuation coefficients of InSe and InSe having different holmium concentrations were measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe and InSe:holmium(0.0025), InSe:holmium(0.0050), InSe:holmium(0.025) and InSe:holmium(0.05) crystals were grown by the Bridgman-Stocbarger method. The measured values are compared with the theoretical ones obtained using WinXcom which is a Windows version of XCOM. The measurement of mass attenuation coefficients of ternary semiconductors is very important because of its use in technology. © 2005 Elsevier Ltd. All rights reserved.
dc.identifier.doi	10.1016/j.jqsrt.2005.06.001
dc.identifier.endpage	347
dc.identifier.issn	0022-4073
dc.identifier.issue	3
dc.identifier.scopus	2-s2.0-33747378598
dc.identifier.startpage	343
dc.identifier.uri	https://rdlopen.rawdatalibrary.net/r/ebyu/16040
dc.identifier.volume	102
dc.language.iso	en
dc.relation.ispartof	Journal of Quantitative Spectroscopy and Radiative Transfer
dc.rights	info:eu-repo/semantics/openAccess
dc.subject	Energy dispersive X-ray spectrometry
dc.subject	Mass attenuation coefficients
dc.subject	Semiconductors
dc.subject	Attenuation
dc.subject	Concentration (process)
dc.subject	Crystals
dc.subject	Energy dispersive spectroscopy
dc.subject	Holmium
dc.subject	Semiconductor doping
dc.subject	X ray spectrometers
dc.subject	mass
dc.subject	spectrometry
dc.subject	Absorption edge
dc.subject	Bridgman-Strocbarger method
dc.subject	Semiconducting indium compounds
dc.title	Measurement of mass attenuation coefficients for holmium doped and undoped layered semiconductors InSe at different energies and the validity of mixture rule for crystals around the absorption edge
dc.type	Article
dspace.entity.type	Publication
rdl.citation.scopus	14
rdl.source.index	SCOPUS