Erzincan Binali Yıldırım ÜniversitesiErzincan Binali Yıldırım ÜniversitesiAçık Erişim Arşivi · RDL Open

Effective mass calculation for InSe, InSe:Er crystals

ArticleAçık Erişim

Özet

Undoped indium selenide (InSe) and Er doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped Er had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10-320 K and the external electric field effect on the absorption measurements is investigated. The absorption edge shifted towards to the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shifting, effective mass values are calculated. (c) 2006 Elsevier B.V. All rights reserved.

Anahtar Kelimeler

effective masselectric fieldInSeInSe : ErINDIUM SELENIDESINGLE-CRYSTALSELECTRIC-FIELDOPTICAL-PROPERTIESABSORPTIONGROWTHMONOSELENIDETRANSPORTGASENanoscience & NanotechnologyPhysics, Condensed MatterScience & Technology - Other TopicsPhysics
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/16553Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.physe.2006.10.023Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorAtes, A.
dc.contributor.authorKundakci, M.
dc.contributor.authorAkaltun, Y.
dc.contributor.authorGurbulak, B.
dc.contributor.authorYildirim, M.
dc.date.accessioned2026-10-18T20:36:26.187435944Z
dc.date.available2026-10-18T20:36:26.187435944Z
dc.date.issued2007
dc.description.abstractUndoped indium selenide (InSe) and Er doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped Er had no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10-320 K and the external electric field effect on the absorption measurements is investigated. The absorption edge shifted towards to the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shifting, effective mass values are calculated. (c) 2006 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.physe.2006.10.023
dc.identifier.eissn1873-1759
dc.identifier.endpage220
dc.identifier.issn1386-9477
dc.identifier.issue2
dc.identifier.startpage217
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/16553
dc.identifier.volume36
dc.identifier.wosWOS:000244613200014
dc.language.isoen
dc.publisherELSEVIER SCIENCE BV
dc.relation.ispartofPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjecteffective mass
dc.subjectelectric field
dc.subjectInSe
dc.subjectInSe : Er
dc.subjectINDIUM SELENIDE
dc.subjectSINGLE-CRYSTALS
dc.subjectELECTRIC-FIELD
dc.subjectOPTICAL-PROPERTIES
dc.subjectABSORPTION
dc.subjectGROWTH
dc.subjectMONOSELENIDE
dc.subjectTRANSPORT
dc.subjectGASE
dc.subjectNanoscience & Nanotechnology
dc.subjectPhysics, Condensed Matter
dc.subjectScience & Technology - Other Topics
dc.subjectPhysics
dc.titleEffective mass calculation for InSe, InSe:Er crystals
dc.typeArticle
dspace.entity.typePublication
rdl.citation.wos11
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)