Taşdemirci, Tuba Çayır

During the correction process, parts of Fig. 4 were inadvertently deleted. Following is the complete figure: (Figure presented.) Fig. 4 SEM-EDAX images of SnO2 thin films as grown, annealed at 250 °C, 300 °C and 350 °C

Çayır Taşdemirci, Tuba

SnO₂ thin films were deposited on glass substrates using the SILAR method at room temperature and subsequently annealed at 250 °C, 300 °C, and 350 °C for 30 min. The structural, morphological, and optical properties of the as-grown and annealed films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM) with energy-dispersive X-ray analysis (EDAX), atomic force microscopy (AFM), and UV–Vis spectroscopy. XRD analysis revealed that increasing the annealing temperature improved crystallinity, enhanced peak intensities, and promoted the formation of the rutile SnO₂ phase. SEM and AFM analyses showed that annealing led to grain growth and smoother film surfaces. EDAX confirmed the presence of Sn and O elements, while the Si signal from the substrate decreased at higher annealing temperatures due to improved surface coverage. UV–Vis measurements indicated a reduction in optical band gap from 3.53 eV (as-grown) to 3.21 eV (350 °C), attributed to enhanced crystallinity and reduced structural defects. The results of this study demonstrate the strong influence of annealing temperature on the structural and optical performance of SILAR-grown SnO₂ thin films, which directly determines their suitability for optoelectronic devices. The enhanced crystallinity and increased crystallite size observed after annealing improve charge carrier mobility by reducing grain boundary scattering. This is particularly beneficial for applications such as transparent conducting electrodes, gas sensors, and thin-film transistors, where high electrical conductivity and structural order are essential.

Ay, Hasan Tayfun; Sarac, Mehmet Fahri; Solakyildirim, Tuba

The photosensing properties of SnO2-coated TiO2 NWs have been fabricated by a two-step sequential deposition method; a thermal oxidation method followed by a hydrolysis method. Pure TiO2 NWs show vertically aligned and uniformly distributed NW arrays on Ti foil. It was observed that the SnO2 coating accumulated on the TiO2 NW surfaces with increasing Sn concentration. It filled the spaces between the NWs and finally covered the entire surface of the 100 mM SnO2 concentrated sample. The presence of increased Sn concentration on the surface was qualitatively determined by EDS and XPS measurements. The PL intensity decreases as the SnO2 coating increases, indicating recombination retardation. Coating thickness also decreases the band gap since electron excitation requires less energy. Since electrons are easily excited by the conduction band of TiO2, SnO2 coatings can form an energy level within the band gap. The highest photosensitivity was 142.05% with 100-mM SnO2-coated TiO2 NW arrays. An alternative approach to photosensitive UV devices can be made with 100-mM SnO2-coated TiO2 NW arrays due to their excellent light absorption properties and efficient charge carrier generation.

Hajahmad, Vael; Alsayed Ali, Murhaf

In this study, we investigate the lepton flavor violation (LFV) of Z gauge boson decaying into two different flavor charged leptons Z→lilj (Z→τμ, Z→τe and Z→μe). This work is performed in the framework of the constrained minimal supersymmetric standard model (CMSSM) which is extended by the type-III seesaw mechanism. By considering constraints from the current experimental bounds on neutrino and supersymmetric particle masses, we calculate the branching ratios of the LFV of Z boson decays. The numerical results are found to be 1.30×10-9 for both the τμ and τe decay channels and 6.40×10-10 for the μe channel. After applying the constraints from the experimental bounds on the radiative two body decays li→ljγ, the branching ratios of the LFV of Z boson decays get an additional suppression of 10-3 for the τμ and τe decay channels and 10-8 for the μe channel. Our prediction of the branching ratios is several orders of magnitude below the current experimental bounds.