Çatır, F. E. Cimilli

Abstract: This study analyzed the optical and structural properties of a CdS thin film grown on FTO and n‑InP substrates to understand its application in semiconductor technology. The bandgap of the CdS film was calculated as 2.432 eV. The film displayed uniform growth and coated the entire surface effectively, as observed through various microscopy and spectroscopy techniques. Furthermore, a Pt/CdS/n-InP/In he-terojunction was developed, and its temperature-dependent I–V characteristics were studied, revealing an ideality factor of 1.161 and a barrier height of 0.793 eV. These values suggested that the CdS interlayer affects the barrier height and ideality factor, particularly under varying temperatures, indicating barrier inhomogeneity. It has been found that the barrier height ranges from 0.337 eV at 120 K to 1.002 eV at 400 K, with corresponding ideality factor changes, demonstrating the Gaussian distribution of inhomogeneous barrier heights across different temperatures.

Solakyildirim, Tuba; Alver, Umit

In this study, Zn1 –xFexS thin films were synthesized using the chemical spray pyrolysis technique at a substrate temperature of 450°C and with varying Fe concentrations. The spraying solution was prepared by combining distilled water with 0.05 M zinc chloride (ZnCl2), 0.05 M iron chloride (FeCl3⋅6H2O), and 0.2 M thiourea ((NH2)2CS). The initial solution was atomized onto heated glass substrates using an ultrasonic nebulizer operating at a frequency of 1.63 MHz and dry air. The morphology of the films was examined by scanning electron microscopy (SEM). The crystal structures were determined by X-ray diffraction analysis (XRD). The optical properties of the films were analyzed using a UV spectrometer. The energy band gap of the films was defined using the absorption spectrum.