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3 →- ArticleYalnız künye2020Synthesis of copper-doped nickel oxide thin films: Structural and optical studies
ÇAYIR TAŞDEMİRCİ, Tuba
The preparation of nanostructured undoped and Cu doped NiO thin films on to amorphous glass substrate via successive ionic layer absorption and reaction (SILAR) is debated. The optical and structural properties of the nanostructure undoped and Cu doped NiO thin films were studied. The characterization techniques such as UV–visible spectroscopy, Scanning Electron Microscopy and Atomic Force Microscopy were used to investigate undoped and Cu doped NiO thin films. Because of UV–Vis analysis of undoped and Cu doped NiO thin films, the optical band gap value decreased from 3.34 to 2.01 eV with the increase of Cu concentration. As a result of SEM analysis, it was seen that the nanostructures formed when the NiO thin film was enlarged changed its shape as the Cu concentration increased. In the results of AFM analysis, it was observed that copper coated on the surface began to decrease on surface roughness.
RDL Kalıcı Kaydıİncele - ArticleYalnız künye2016Chemically synthesis and characterization of MnS thin films by SILAR method
Yildirim, M. Ali; Yildirim, Sümeyra Tuna; Cavanmirza, Ilke; Ateş, Aytunç
MnS thin films were synthesized on glass substrates using SILAR method. The film thickness effect on structural, morphological, optical and electrical properties of the films was investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with β-MnS structure and were covered well on glass substrates. The bandgap and resistivity values of the films decreased from 3.39 eV to 2.92 eV and from 11.84 × 106 to 2.21 × 105 Ω-cm as the film thickness increased from 180 to 350 nm, respectively. The refractive index (n) and dielectric constants (εo, ε∞) values were calculated.
RDL Kalıcı Kaydıİncele - ArticleYalnız künye2011Influence of the chemical environment changes on the line shape and intensity ratio values for La, Ce and Pr L lines spectra
Porikli, Sevil
We measured the energy shifts and relative intensities of Lα, Lβ and Lγ components in 26 elements under identical conditions using Si(Li) detector and 241Am as the source of excitation. The purpose of these measurements was to characterize the dependence of the line position and line width with the chemical environment changes. The spectra were fitted by Gaussian functions and the background was removed from the experimental spectra using a polynomial function. The present intensity ratio values are in good agreement with the data of Scofield [1]. The values measured by Erturul [2] show a similar behavior but somewhat higher.
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Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| creativeworkseries.issn | 0009-2614 | |
| creativeworkseries.issn | 1873-4448 | |
| dc.date.accessioned | 2026-10-20T15:40:19.125330612Z | |
| dc.date.available | 2026-10-20T15:40:19.125330612Z | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/ebyu/24533 | |
| dc.publisher | Elsevier B.V. | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.title | Chemical Physics Letters | |
| dspace.entity.type | Journal |
