A new floating memristor based on CBTA with grounded capacitors
Özet
This paper presents a new floating memristor emulator (FME) consisting of only a single current backward transconductance amplifier (CBTA) as the active element and two grounded capacitors. The proposed FME-based on CBTA enjoys some advantages that include minimum active and passive elements without using an analog multiplier circuit and grounded passive elements which are attractive for the integrated circuit. In addition, excluding the DC power supply voltage, it does not use bias voltage and/or bias current. The designed memristor circuit provides incremental and decremental characteristics without changing circuit topology or using a switching mechanism and it is implemented with a minimum of circuit elements. All simulation results for the memristor emulator were obtained as expected when compared with fabricated memristors. © 2019 World Scientific Publishing Company.
Anahtar Kelimeler
Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| dc.contributor.author | Yesil, Abdullah | |
| dc.contributor.author | Babacan, Yunus | |
| dc.contributor.author | Kacar, Flrat | |
| dc.date.accessioned | 2026-10-18T20:28:29.628598134Z | |
| dc.date.available | 2026-10-18T20:28:29.628598134Z | |
| dc.date.issued | 2019 | |
| dc.description.abstract | This paper presents a new floating memristor emulator (FME) consisting of only a single current backward transconductance amplifier (CBTA) as the active element and two grounded capacitors. The proposed FME-based on CBTA enjoys some advantages that include minimum active and passive elements without using an analog multiplier circuit and grounded passive elements which are attractive for the integrated circuit. In addition, excluding the DC power supply voltage, it does not use bias voltage and/or bias current. The designed memristor circuit provides incremental and decremental characteristics without changing circuit topology or using a switching mechanism and it is implemented with a minimum of circuit elements. All simulation results for the memristor emulator were obtained as expected when compared with fabricated memristors. © 2019 World Scientific Publishing Company. | |
| dc.description.sponsorship | The authors would like to thank the Istanbul University Research Fund for providing ¯nancial support for this work (Project code 28845). | |
| dc.identifier.doi | 10.1142/s0218126619502177 | |
| dc.identifier.eissn | 1793-6454 | |
| dc.identifier.issn | 0218-1266 | |
| dc.identifier.issue | 13 | |
| dc.identifier.scopus | 2-s2.0-85060022589 | |
| dc.identifier.startpage | 1950217 | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/ebyu/13660 | |
| dc.identifier.volume | 28 | |
| dc.identifier.wos | WOS:000506861700006 | |
| dc.language.iso | en | |
| dc.publisher | World Scientific Publishing Co. Pte Ltd | |
| dc.relation.ispartof | Journal of Circuits, Systems and Computers | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | CBTA | |
| dc.subject | decremental and incremental | |
| dc.subject | emulator | |
| dc.subject | floating | |
| dc.subject | Memristor | |
| dc.subject | nonvolatility | |
| dc.subject | SPICE | |
| dc.subject | Bias voltage | |
| dc.subject | Memristors | |
| dc.subject | Electric grounding | |
| dc.title | A new floating memristor based on CBTA with grounded capacitors | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| rdl.citation.scopus | 31 | |
| rdl.citation.wos | 29 | |
| rdl.source.index | SCOPUS | |
| rdl.source.index | WOS | |
| rdl.wos.index | Science Citation Index Expanded (SCI-EXPANDED) |
