A new floating memristor based on CBTA with grounded capacitors

ArticleAçık Erişim

Özet

This paper presents a new floating memristor emulator (FME) consisting of only a single current backward transconductance amplifier (CBTA) as the active element and two grounded capacitors. The proposed FME-based on CBTA enjoys some advantages that include minimum active and passive elements without using an analog multiplier circuit and grounded passive elements which are attractive for the integrated circuit. In addition, excluding the DC power supply voltage, it does not use bias voltage and/or bias current. The designed memristor circuit provides incremental and decremental characteristics without changing circuit topology or using a switching mechanism and it is implemented with a minimum of circuit elements. All simulation results for the memristor emulator were obtained as expected when compared with fabricated memristors. © 2019 World Scientific Publishing Company.

Anahtar Kelimeler

RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/13660Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1142/s0218126619502177Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorYesil, Abdullah
dc.contributor.authorBabacan, Yunus
dc.contributor.authorKacar, Flrat
dc.date.accessioned2026-10-18T20:28:29.628598134Z
dc.date.available2026-10-18T20:28:29.628598134Z
dc.date.issued2019
dc.description.abstractThis paper presents a new floating memristor emulator (FME) consisting of only a single current backward transconductance amplifier (CBTA) as the active element and two grounded capacitors. The proposed FME-based on CBTA enjoys some advantages that include minimum active and passive elements without using an analog multiplier circuit and grounded passive elements which are attractive for the integrated circuit. In addition, excluding the DC power supply voltage, it does not use bias voltage and/or bias current. The designed memristor circuit provides incremental and decremental characteristics without changing circuit topology or using a switching mechanism and it is implemented with a minimum of circuit elements. All simulation results for the memristor emulator were obtained as expected when compared with fabricated memristors. © 2019 World Scientific Publishing Company.
dc.description.sponsorshipThe authors would like to thank the Istanbul University Research Fund for providing ¯nancial support for this work (Project code 28845).
dc.identifier.doi10.1142/s0218126619502177
dc.identifier.eissn1793-6454
dc.identifier.issn0218-1266
dc.identifier.issue13
dc.identifier.scopus2-s2.0-85060022589
dc.identifier.startpage1950217
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/13660
dc.identifier.volume28
dc.identifier.wosWOS:000506861700006
dc.language.isoen
dc.publisherWorld Scientific Publishing Co. Pte Ltd
dc.relation.ispartofJournal of Circuits, Systems and Computers
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCBTA
dc.subjectdecremental and incremental
dc.subjectemulator
dc.subjectfloating
dc.subjectMemristor
dc.subjectnonvolatility
dc.subjectSPICE
dc.subjectBias voltage
dc.subjectMemristors
dc.subjectElectric grounding
dc.titleA new floating memristor based on CBTA with grounded capacitors
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus31
rdl.citation.wos29
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)