Tunable memristor employing only four transistors
Özet
This paper introduces a flux-controlled memristor emulator circuit which can be controlled by electronically both fix and variable parts of memristance. Here, the fix part symbolizes the average memristance value, and the variable part refers to the changing part around the fixed part. Another advantage of the presented circuit is that it is composed of only four transistors and one grounded capacitor which provides memory to the circuit. For this reason, it can be said that the circuit is very simple, compatible with both VLSI implementation, and suitable for implementation on breadboards using discrete circuit elements. The proposed circuit can be operated at MHz frequency ranges and a strong pinched hysteresis loop can be seen at these frequencies. Finally, all simulation and experimental results are compatible with previous studies. © 2023 Elsevier GmbH
Anahtar Kelimeler
Tam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| dc.contributor.author | Yesil, Abdullah | |
| dc.contributor.author | Babacan, Yunus | |
| dc.date.accessioned | 2026-10-18T20:27:09.754187552Z | |
| dc.date.available | 2026-10-18T20:27:09.754187552Z | |
| dc.date.issued | 2023 | |
| dc.description.abstract | This paper introduces a flux-controlled memristor emulator circuit which can be controlled by electronically both fix and variable parts of memristance. Here, the fix part symbolizes the average memristance value, and the variable part refers to the changing part around the fixed part. Another advantage of the presented circuit is that it is composed of only four transistors and one grounded capacitor which provides memory to the circuit. For this reason, it can be said that the circuit is very simple, compatible with both VLSI implementation, and suitable for implementation on breadboards using discrete circuit elements. The proposed circuit can be operated at MHz frequency ranges and a strong pinched hysteresis loop can be seen at these frequencies. Finally, all simulation and experimental results are compatible with previous studies. © 2023 Elsevier GmbH | |
| dc.identifier.doi | 10.1016/j.aeue.2023.154763 | |
| dc.identifier.issn | 1434-8411 | |
| dc.identifier.scopus | 2-s2.0-85161035847 | |
| dc.identifier.startpage | 154763 | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/ebyu/12240 | |
| dc.identifier.volume | 169 | |
| dc.language.iso | en | |
| dc.publisher | Elsevier GmbH | |
| dc.relation.ispartof | AEU - International Journal of Electronics and Communications | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | CMOS | |
| dc.subject | Decremental configuration | |
| dc.subject | Emulator | |
| dc.subject | Experimental results | |
| dc.subject | Incremental configuration | |
| dc.subject | Memristor | |
| dc.subject | Non-volatility | |
| dc.subject | Tunable | |
| dc.subject | CMOS integrated circuits | |
| dc.subject | Electric network analysis | |
| dc.subject | Decremental configurations | |
| dc.subject | Experimental result | |
| dc.subject | Flux-controlled | |
| dc.subject | Incremental configurations | |
| dc.subject | Memristance | |
| dc.subject | Nonvolatility | |
| dc.subject | Tunables | |
| dc.subject | Memristors | |
| dc.title | Tunable memristor employing only four transistors | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| rdl.citation.scopus | 15 | |
| rdl.source.index | SCOPUS |
