Tunable memristor employing only four transistors

ArticleAçık Erişim

Özet

This paper introduces a flux-controlled memristor emulator circuit which can be controlled by electronically both fix and variable parts of memristance. Here, the fix part symbolizes the average memristance value, and the variable part refers to the changing part around the fixed part. Another advantage of the presented circuit is that it is composed of only four transistors and one grounded capacitor which provides memory to the circuit. For this reason, it can be said that the circuit is very simple, compatible with both VLSI implementation, and suitable for implementation on breadboards using discrete circuit elements. The proposed circuit can be operated at MHz frequency ranges and a strong pinched hysteresis loop can be seen at these frequencies. Finally, all simulation and experimental results are compatible with previous studies. © 2023 Elsevier GmbH

Anahtar Kelimeler

RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/12240Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.aeue.2023.154763Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorYesil, Abdullah
dc.contributor.authorBabacan, Yunus
dc.date.accessioned2026-10-18T20:27:09.754187552Z
dc.date.available2026-10-18T20:27:09.754187552Z
dc.date.issued2023
dc.description.abstractThis paper introduces a flux-controlled memristor emulator circuit which can be controlled by electronically both fix and variable parts of memristance. Here, the fix part symbolizes the average memristance value, and the variable part refers to the changing part around the fixed part. Another advantage of the presented circuit is that it is composed of only four transistors and one grounded capacitor which provides memory to the circuit. For this reason, it can be said that the circuit is very simple, compatible with both VLSI implementation, and suitable for implementation on breadboards using discrete circuit elements. The proposed circuit can be operated at MHz frequency ranges and a strong pinched hysteresis loop can be seen at these frequencies. Finally, all simulation and experimental results are compatible with previous studies. © 2023 Elsevier GmbH
dc.identifier.doi10.1016/j.aeue.2023.154763
dc.identifier.issn1434-8411
dc.identifier.scopus2-s2.0-85161035847
dc.identifier.startpage154763
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/12240
dc.identifier.volume169
dc.language.isoen
dc.publisherElsevier GmbH
dc.relation.ispartofAEU - International Journal of Electronics and Communications
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCMOS
dc.subjectDecremental configuration
dc.subjectEmulator
dc.subjectExperimental results
dc.subjectIncremental configuration
dc.subjectMemristor
dc.subjectNon-volatility
dc.subjectTunable
dc.subjectCMOS integrated circuits
dc.subjectElectric network analysis
dc.subjectDecremental configurations
dc.subjectExperimental result
dc.subjectFlux-controlled
dc.subjectIncremental configurations
dc.subjectMemristance
dc.subjectNonvolatility
dc.subjectTunables
dc.subjectMemristors
dc.titleTunable memristor employing only four transistors
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus15
rdl.source.indexSCOPUS