Design of Memristor with Hard-Switching Behavior Employing only One CCCII and One Capacitor

ArticleAçık Erişim

Özet

In this paper, we present second generation current-controlled conveyor (CCCII)-based simple memristor circuit which exhibits a hard-switching voltage-current relationship. The proposed memristor circuit contains only single CCCII and single grounded capacitor that are attractive for the integrated circuit designers. The proposed memristor emulator has four main advantages: hard-switching behavior, not utilizing multiplier circuit, biasing current or voltage source (excluding DC current or voltage source), and being free of body effect for all transistors. Cadence Spectre Analog Environment with TSMC 0.18μm process parameters is used for all simulations. The memristive chip occupies only 81.85μm×87.76μm area. All simulation results are presented to demonstrate the performance of the proposed circuit by changing some parameters such as frequency, temperature, DC power supply voltages and process variations. Also, the robust performance of the proposed memristor is confirmed via Monte Carlo simulations. The simulation results for designed memristor are in accordance with theoretical memristive behavior. © 2021 World Scientific Publishing Company.

Anahtar Kelimeler

RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/13019Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1142/s0218126621501516Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorYesil, Abdullah
dc.contributor.authorBabacan, Yunus
dc.date.accessioned2026-10-18T20:27:51.967244465Z
dc.date.available2026-10-18T20:27:51.967244465Z
dc.date.issued2021
dc.description.abstractIn this paper, we present second generation current-controlled conveyor (CCCII)-based simple memristor circuit which exhibits a hard-switching voltage-current relationship. The proposed memristor circuit contains only single CCCII and single grounded capacitor that are attractive for the integrated circuit designers. The proposed memristor emulator has four main advantages: hard-switching behavior, not utilizing multiplier circuit, biasing current or voltage source (excluding DC current or voltage source), and being free of body effect for all transistors. Cadence Spectre Analog Environment with TSMC 0.18μm process parameters is used for all simulations. The memristive chip occupies only 81.85μm×87.76μm area. All simulation results are presented to demonstrate the performance of the proposed circuit by changing some parameters such as frequency, temperature, DC power supply voltages and process variations. Also, the robust performance of the proposed memristor is confirmed via Monte Carlo simulations. The simulation results for designed memristor are in accordance with theoretical memristive behavior. © 2021 World Scientific Publishing Company.
dc.identifier.doi10.1142/s0218126621501516
dc.identifier.eissn1793-6454
dc.identifier.issn0218-1266
dc.identifier.issue9
dc.identifier.scopus2-s2.0-85101535816
dc.identifier.startpage2150151
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/13019
dc.identifier.volume30
dc.identifier.wosWOS:000683455300004
dc.language.isoen
dc.publisherWorld Scientific
dc.relation.ispartofJournal of Circuits, Systems and Computers
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectCMOS integrated circuit
dc.subjecthard switching
dc.subjectlayout
dc.subjectMemristor emulator
dc.subjectMonte Carlo methods
dc.subjectDC power supplies
dc.subjectGrounded capacitors
dc.subjectMemristive behavior
dc.subjectMultiplier circuits
dc.subjectProcess parameters
dc.subjectProcess Variation
dc.subjectRobust performance
dc.subjectSecond generation
dc.subjectMemristors
dc.titleDesign of Memristor with Hard-Switching Behavior Employing only One CCCII and One Capacitor
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus14
rdl.citation.wos13
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)