Annealing effect on I-V and C-V characteristics of Al/n-InP Schottky diodes at low temperatures

In this study, Schottky contacts have been fabricated on n-InP (1 0 0) using an Al/n-InP/In configuration. The current voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-InP/In Schottky diodes were calculated from the liquid nitrogen temperature to the room temperature by steps of 10 K before annealing of this structure and after annealing at 400 °C for 3 min. The series resistance, ideality factor and barrier height values calculated using I-V characteristics, Cheung functions, Norde (F-V) functions, and C-V characteristics before and after annealing the contact and compared for each temperature. These measurements clearly showed that the Al/n-InP/In Schottky diode became extremely stable due to the annealing process and the mean barrier height value have been increased from 0,494 to 0,674 eV after thermal annealing at 400 °C. In addition, temperature dependent barrier height values of as-fab. and annealed (at 400 °C) Al/n-InP/InSchottky contacts are consistent with "the barrier inhomogeneous model" of Schottky diodes. © 2021 Elsevier Ltd. All rights reserved.