The Structural, Optical, and Electrical Characterization of Ti/n-InP Schottky Diodes with Graphene Oxide Interlayer Deposited by Spray Pyrolysis Method

Ti/GO/n-InP Schottky barrier diode (SBD) is obtained by growing graphene oxide (GO) film on n/InP semiconductor using easy and economical spray pyrolysis method. The effect of GO as the interfacial layer on device performance of Ti/GO/n-InP SBD is investigated in detail. The optical absorbance spectra show that bandgap energy of the GO film is 3.57 eV. The optical transmittance value of 79.5% is in consistent with the absorbance spectra of GO film. The barrier heights (BHs) that are estimated for the Ti/GO/n-InP SBD vary from 0.263 to 0.980 eV (I–V) and 1.328 to 1.006 eV (C–V) from the I–V and C–V measurements in the temperature range of 100–400 K. The contradiction between the BHs from the I–V and C–V characteristics is discussed. The mean BH values are found to be Φb01 = 0.98 eV (250–400 K) and Φb02 = 0.73 eV (100–250 K) from the Φb0–1/2kT plot. From the modified Richardson plots based on a Gaussian distribution of BH, Φb01 = 0.93 (250–400 K) and Φb02 = 0.69 eV (100–250 K) and A* is calculated to be 12.44 and 12.73 A cm−2 K−2, respectively. The I–V–T and C–V–T measurements demonstrate that carrier transport mechanism of Ti/GO/n-InP is well explained by thermionic emission (TE) mechanism with a double Gaussian distribution of the Schottky barrier heights (SBHs). © 2020 Wiley-VCH GmbH