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Copper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature

ArticleAçık Erişim

Özet

Abstract: To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 °C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV–Vis) and Fourier transform infrared spectroscopy devices were used. Graphic Abstract: [Figure not available: see fulltext.]. © 2020, The Korean Institute of Metals and Materials.

Anahtar Kelimeler

AnnealedCuO thin filmsSemiconductorsSILAR methodAbsorption spectroscopyAnnealingCopper oxidesFourier transform infrared spectroscopyLight absorptionOxide filmsScanning electron microscopySemiconductor materialsAnnealing temperaturesCopper oxide thin filmsMolecular propertiesNano-structuredReaction methodThin films
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/13582Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1007/s13391-020-00205-4Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorÇayir Taşdemirci, Tuba
dc.date.accessioned2026-10-18T20:28:24.903884420Z
dc.date.available2026-10-18T20:28:24.903884420Z
dc.date.issued2020
dc.description.abstractAbstract: To coat CuO thin films on the glass surface, an easily controlled successive ionic layer absorption and reaction method was used. CuO thin films were grown at room temperature. The CuO thin films obtained were annealed for 30 min at 200, 300 and 400 °C. The changes caused by annealing temperature on nanostructured CuO thin films were studied. Structural, morphological, optical and molecular properties of annealed CuO thin films were investigated. For this analysis, X-ray diffraction, Scanning electron microscopy, Atomic force microscopy, RAMAN and Optical absorption spectroscopy (UV–Vis) and Fourier transform infrared spectroscopy devices were used. Graphic Abstract: [Figure not available: see fulltext.]. © 2020, The Korean Institute of Metals and Materials.
dc.description.sponsorshipThis research is partially supported by Erzincan University Research Foundation, Project No: FEN-A-150615-0146.
dc.identifier.doi10.1007/s13391-020-00205-4
dc.identifier.eissn2093-6788
dc.identifier.endpage246
dc.identifier.issn1738-8090
dc.identifier.issue3
dc.identifier.scopus2-s2.0-85079452581
dc.identifier.startpage239
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/13582
dc.identifier.volume16
dc.identifier.wosWOS:000513034000001
dc.language.isoen
dc.publisherKorean Institute of Metals and Materials
dc.relation.ispartofElectronic Materials Letters
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectAnnealed
dc.subjectCuO thin films
dc.subjectSemiconductors
dc.subjectSILAR method
dc.subjectAbsorption spectroscopy
dc.subjectAnnealing
dc.subjectCopper oxides
dc.subjectFourier transform infrared spectroscopy
dc.subjectLight absorption
dc.subjectOxide films
dc.subjectScanning electron microscopy
dc.subjectSemiconductor materials
dc.subjectAnnealing temperatures
dc.subjectCopper oxide thin films
dc.subjectMolecular properties
dc.subjectNano-structured
dc.subjectReaction method
dc.subjectThin films
dc.titleCopper Oxide Thin Films Synthesized by SILAR: Role of Varying Annealing Temperature
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus26
rdl.citation.wos23
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)