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Influence of annealing on properties of SILAR deposited nickel oxide films

ArticleAçık Erişim

Özet

Nickel Oxide (NiO) thin films have been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Grown NiO thin films subsequently annealed from 200 °C to 400 °C for 0.5 h. The effect of annealing temperature on the structural, morfological, molecular and optical properties were analyzed. NiO thin films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), fouirer transform infrared spektrofotometre (FTIR) and UV–vis spectrophotometer respectively. The crystal and surface properties of NiO thin films developed with annealing temperature. The energy band gap values were reduced from 3.3 to 3.11 eV depending with annealing temperature. © 2019 Elsevier Ltd

Anahtar Kelimeler

AnnealingNiOSILARThin filmsAtomic force microscopyEnergy gapFourier transform infrared spectroscopyNickel oxideOptical propertiesScanning electron microscopySubstratesAnnealing temperaturesEffect of annealingEnergy bandgapsGlass substratesNickel oxides (NiO)NiO thin filmSuccessive ionic layer adsorption and reactionsOxide films
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Tam Kayıt
AlanDeğerDil
dc.contributor.authorÇayır Taşdemirci, Tuba
dc.date.accessioned2026-10-18T20:28:47.928141472Z
dc.date.available2026-10-18T20:28:47.928141472Z
dc.date.issued2019
dc.description.abstractNickel Oxide (NiO) thin films have been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) method on glass substrates at room temperature. Grown NiO thin films subsequently annealed from 200 °C to 400 °C for 0.5 h. The effect of annealing temperature on the structural, morfological, molecular and optical properties were analyzed. NiO thin films were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), fouirer transform infrared spektrofotometre (FTIR) and UV–vis spectrophotometer respectively. The crystal and surface properties of NiO thin films developed with annealing temperature. The energy band gap values were reduced from 3.3 to 3.11 eV depending with annealing temperature. © 2019 Elsevier Ltd
dc.description.sponsorshipThis work was supported by Erzincan Binali Yıldırım University Research Foundation , Project No: FEN-A-150615-0146 .
dc.identifier.doi10.1016/j.vacuum.2019.05.047
dc.identifier.eissn1879-2715
dc.identifier.endpage194
dc.identifier.issn0042-207X
dc.identifier.scopus2-s2.0-85067171592
dc.identifier.startpage189
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/14004
dc.identifier.volume167
dc.identifier.wosWOS:000482245800028
dc.language.isoen
dc.publisherElsevier Ltd
dc.relation.ispartofVacuum
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectAnnealing
dc.subjectNiO
dc.subjectSILAR
dc.subjectThin films
dc.subjectAtomic force microscopy
dc.subjectEnergy gap
dc.subjectFourier transform infrared spectroscopy
dc.subjectNickel oxide
dc.subjectOptical properties
dc.subjectScanning electron microscopy
dc.subjectSubstrates
dc.subjectAnnealing temperatures
dc.subjectEffect of annealing
dc.subjectEnergy bandgaps
dc.subjectGlass substrates
dc.subjectNickel oxides (NiO)
dc.subjectNiO thin film
dc.subjectSuccessive ionic layer adsorption and reactions
dc.subjectOxide films
dc.titleInfluence of annealing on properties of SILAR deposited nickel oxide films
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus48
rdl.citation.wos43
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)