Low-level NO gas sensing properties of Zn1-xSnxO nanostructure sensors under UV light irradiation at room temperature

ArticleAçık Erişim

Özet

Zn1-xSnxO (x = 0, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn0.90Sn0.10O sensor has exhibited the highest response for 20 ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn0.90Sn0.10O sensor. Zn0.90Sn0.10O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas. © Indian Academy of Sciences.

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RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/14099Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1007/s12034-018-1714-zYayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorKaraduman Er, Irmak
dc.contributor.authorÇağirtekin, Ali Orkun
dc.contributor.authorÇorlu, Tuğba
dc.contributor.authorYildirim, Memet Ali
dc.contributor.authorAteş, Aytunç
dc.contributor.authorAcar, Selim
dc.date.accessioned2026-10-18T20:28:52.657192956Z
dc.date.available2026-10-18T20:28:52.657192956Z
dc.date.issued2019
dc.description.abstractZn1-xSnxO (x = 0, 0.05, 0.10, 0.15, 0.20) nanostructures have been grown through the successive ionic layer adsorption and reaction method. The structural, morphological and compositional properties of the nanostructures have been characterized through X-ray diffraction, scanning electron microscope and energy dispersive X-ray analysis, respectively. The NO gas sensing properties of sensors to 20 ppb have been systematically investigated in the dark and under UV light irradiation. A Zn0.90Sn0.10O sensor has exhibited the highest response for 20 ppb NO gas compared with other sensors. The sensor response has increased from 1.9 to 43% depending on the UV light irradiation for the Zn0.90Sn0.10O sensor. Zn0.90Sn0.10O nanostructure can be used as a suitable gas sensor material for detection of low concentration levels of NO gas. © Indian Academy of Sciences.
dc.description.sponsorshipThis work was supported by TUBITAK with Project No. 115M658 and Gazi University Scientific Research Fund Project No. 05/2016-21.
dc.identifier.doi10.1007/s12034-018-1714-z
dc.identifier.eissn0973-7669
dc.identifier.issn0250-4707
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85069548674
dc.identifier.startpage32
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/14099
dc.identifier.volume42
dc.identifier.wosWOS:000457387200007
dc.language.isoen
dc.publisherSpringer
dc.relation.ispartofBulletin of Materials Science
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectGas sensor
dc.subjectSn-doped ZnO nanostructures
dc.subjectUV light irradiation
dc.subjectChemical detection
dc.subjectChemical sensors
dc.subjectEnergy dispersive X ray analysis
dc.subjectGas detectors
dc.subjectII-VI semiconductors
dc.subjectIrradiation
dc.subjectNanostructures
dc.subjectOxide minerals
dc.subjectScanning electron microscopy
dc.subjectX ray diffraction analysis
dc.subjectZinc oxide
dc.subjectCompositional properties
dc.subjectGas sensor materials
dc.subjectLow concentration levels
dc.subjectNo gas sensing
dc.subjectSensor response
dc.subjectSn-doped ZnO
dc.subjectSuccessive ionic layer adsorption and reactions
dc.subjectUV-light irradiation
dc.subjectGases
dc.titleLow-level NO gas sensing properties of Zn1-xSnxO nanostructure sensors under UV light irradiation at room temperature
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus17
rdl.citation.wos17
rdl.oa.statusgreen
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)