Growth, optical and electirical properties of In2S3, In1-xCdxS and CdS thin films by the (SILAR) method

In2S3 and In1-xCdxS and CdS thin films were grown on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature. The band gap energies of the films were determined by optical absorption measurements. The optical absorption measurements were done as a function of the in the 10-320 K temperature range. It has been seen that, the band gap energies of the In 1-XS3, In1-xCdxS and CdS are decreasing with in increasing temperature. The electrical characterization was done by current-voltage measurements with two probe method. The electrical resistivity measurements were done as a function of the in the 300-450 K temperature range. The electrical resistivity are decreasing with in increasing temperature. The resistivity were calculated at 300 K and 450 K, as 2times;l06 Ωcm and 1×104 Ωcm 1,5×107 and 5,4×103, 1,5×107 and 1,2×104 Ωm for CdS, In1-xCdxS, In2S3, respectively. © 2007 American Institute of Physics.