Tumasyan, A.; Adam, W.; Andrejkovic, J.W.; Bergauer, T.; Blöch, D.; Chatterjee, S.; Dragicevic, M.; Escalante Del Valle, A.; Frühwirth, R.; Hinger, V.

The strategies for and the performance of the CMS silicon tracking system alignment during the 2015–2018 data-taking period of the LHC are described. The alignment procedures during and after data taking are explained. Alignment scenarios are also derived for use in the simulation of the detector response. Systematic effects, related to intrinsic symmetries of the alignment task or to external constraints, are discussed and illustrated for different scenarios.

Polat, Recep; Yaln, Zeynel; Içelli, Orhan

Some photonic energy absorption parameters such as the mass attenuation coefficient μt, the molecular σM, atomic σA, the electronic cross-sections σE, the effective atomic number Zeff and the electron density NE have been calculated and measured. We have gained the terms jump factor of effective atomic number JZeff and jump factor of electronic density JNE to literature with the help of these fundamental parameters. Also, we want to obtain both XAFS effect and the applicability of mixture rule. The most interesting finding in this study is that the trend of the total molecular, atomic and electronic cross-sections is getting beyond the measure by the absorption edge and these cross-sections are affected in the region of absorption edge. The obtained results have been compared with some other theoretical values given earlier.

Polat, Recep; Içelli, Orhan

In order to measure atomic, molecular and electronic cross-section; the effective atomic number, density of electron and absorption jump factor, we have first measured μt values of compounds which are determined by mixture rule using transmission method. In order to measure experimentally the effective atomic number within absorption jump factors of compounds with Ce, the X-ray source used Am-241 whose gamma rays were stopped at secondary source (Sm), thus producing Kα and Kβ X-ray emission. The most crucial finding in this study is that measurement of the effective atomic number is not appropriate near to the absorption edge and the effective atomic number is affected by near to the absorption edge. The results obtained have been compared with theoretical values.

Polat, Recep; Içelli, Orhan

In order to determine the effect of XAFS (X-ray absorption fine structure) on Jzeff, we have measured μ/ρ values of compounds, which are determined by the mixture rule or the independent atomic model. Also, we want to obtain both XAFS effect and non-applicability or applicability of mixture rule. The most crucial finding in this study is that measurement of the effective atomic number is not appropriate near the absorption edge and the effective atomic number is affected by near the absorption edge. The results obtained have been compared with theoretical values. Also, the objective of this study is to show that there is a term "Jzeff" between effective atomic numbers and absorption jump factor.

Ïçelli, Orhan

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmium(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXCom being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe.

Içelli, Orhan; Çankaya, Güven; Çetin, Ahmet

The linear differential scattering coefficients at 60 keV have been measured for GaAs, p-Si and n-Si semiconductors at seven angles ranging from 60° to 120° at intervals of 10°. The results have been compared with relativistic and non-relativistic theoretical values. The objective of this work is to seek evidence whether there is a relationship between the LDSC and the scattering angle. The LDSCs have been measured with energy-dispersive X-ray fluorescence spectroscopy (EDXRF) for wafers as GaAs, n- and p-type Si. This is the first time the LDSCs have been measured at <100 keV energies, so there is no comparable findings reported in the literature.