Ultra-Low voltage-power DTMOS based full-wave rectifier

ArticleAçık Erişim

Özet

In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. © 2018

Anahtar Kelimeler

RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/14109Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.aeue.2018.04.023Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorBabacan, Yunus
dc.date.accessioned2026-10-18T20:28:53.480913002Z
dc.date.available2026-10-18T20:28:53.480913002Z
dc.date.issued2018
dc.description.abstractIn this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. © 2018
dc.identifier.doi10.1016/j.aeue.2018.04.023
dc.identifier.eissn1618-0399
dc.identifier.endpage23
dc.identifier.issn1434-8411
dc.identifier.scopus2-s2.0-85046663233
dc.identifier.startpage18
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/14109
dc.identifier.volume91
dc.identifier.wosWOS:000438320700003
dc.language.isoen
dc.publisherElsevier GmbH
dc.relation.ispartofAEU - International Journal of Electronics and Communications
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectDTMOS
dc.subjectFull-wave rectifier
dc.subjectUltra low-power
dc.subjectUltra low-voltage
dc.subjectPassive networks
dc.subjectRectifying circuits
dc.subjectCircuit components
dc.subjectDynamic threshold mos (DTMOS)
dc.subjectFull-wave rectifiers
dc.subjectPost layout simulation
dc.subjectUltra low power
dc.subjectUltra-low power consumption
dc.subjectUltra-low-voltage
dc.subjectElectric rectifiers
dc.titleUltra-Low voltage-power DTMOS based full-wave rectifier
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus8
rdl.citation.wos7
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)