Ultra-Low voltage-power DTMOS based full-wave rectifier
ArticleAçık Erişim
Özet
In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. © 2018
Anahtar Kelimeler
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/14109Resmi atıflarda kullanılan kalıcı adresTam Kayıt
| Alan | Değer | Dil |
|---|---|---|
| dc.contributor.author | Babacan, Yunus | |
| dc.date.accessioned | 2026-10-18T20:28:53.480913002Z | |
| dc.date.available | 2026-10-18T20:28:53.480913002Z | |
| dc.date.issued | 2018 | |
| dc.description.abstract | In this paper, dynamic threshold MOS (DTMOS) transistor based full-wave rectifier with ultra-low power consumption is presented. The proposed circuit composed of only four NMOS and seven DTMOS transistors when many rectifier circuits consist of passive circuit components such as diodes, resistors and active circuit elements. The layout occupies an active area of 24.6 µm × 65.01 µm and post-layout simulation results performed using Cadence Environment with 0.18 µm TSMC CMOS technology parameters. The rectifier circuit with ±0.2 V DC supply voltages can be operated up to approximately 500 MHz and consumes only 2.83 nW thanks to the DTMOS transistors. © 2018 | |
| dc.identifier.doi | 10.1016/j.aeue.2018.04.023 | |
| dc.identifier.eissn | 1618-0399 | |
| dc.identifier.endpage | 23 | |
| dc.identifier.issn | 1434-8411 | |
| dc.identifier.scopus | 2-s2.0-85046663233 | |
| dc.identifier.startpage | 18 | |
| dc.identifier.uri | https://rdlopen.rawdatalibrary.net/r/ebyu/14109 | |
| dc.identifier.volume | 91 | |
| dc.identifier.wos | WOS:000438320700003 | |
| dc.language.iso | en | |
| dc.publisher | Elsevier GmbH | |
| dc.relation.ispartof | AEU - International Journal of Electronics and Communications | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.subject | DTMOS | |
| dc.subject | Full-wave rectifier | |
| dc.subject | Ultra low-power | |
| dc.subject | Ultra low-voltage | |
| dc.subject | Passive networks | |
| dc.subject | Rectifying circuits | |
| dc.subject | Circuit components | |
| dc.subject | Dynamic threshold mos (DTMOS) | |
| dc.subject | Full-wave rectifiers | |
| dc.subject | Post layout simulation | |
| dc.subject | Ultra low power | |
| dc.subject | Ultra-low power consumption | |
| dc.subject | Ultra-low-voltage | |
| dc.subject | Electric rectifiers | |
| dc.title | Ultra-Low voltage-power DTMOS based full-wave rectifier | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| rdl.citation.scopus | 8 | |
| rdl.citation.wos | 7 | |
| rdl.source.index | SCOPUS | |
| rdl.source.index | WOS | |
| rdl.wos.index | Science Citation Index Expanded (SCI-EXPANDED) |
