Erzincan Binali Yıldırım ÜniversitesiErzincan Binali Yıldırım ÜniversitesiAçık Erişim Arşivi · RDL Open

Measurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge

ArticleAçık Erişim

Özet

Effective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmium(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXCom being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. © 2009 Elsevier B.V. All rights reserved.

Anahtar Kelimeler

Effective atomic numberMass attenuation coefficientsSemiconductorsTransmission methodAtomic physicsCrystalsElectric conductivityHolmiumRadiationSemiconducting silicon compoundsSemiconductor materialsSugar (sucrose)Absorption edgesAtomic numbersBridgmanEnergy regionsLayered semiconductorsSi detectorsWindows versionsAtoms
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/16165Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.nima.2008.12.144Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorÏçelli, Orhan
dc.date.accessioned2026-10-18T20:30:58.454744175Z
dc.date.available2026-10-18T20:30:58.454744175Z
dc.date.issued2009
dc.description.abstractEffective atomic numbers were measured for InSe and InSe having different Holmium concentrations measured in the energy region 15.746-40.930 keV using a Si(Li) detector. InSe:Holmium(0.0025), InSe:Holmium(0.0050), InSe:Holmium(0.025) InSe:Holmium(0.05) and InSe crystals have been grown by the Bridgman-Stocbarger method. The measured values were compared with the theoretical ones obtained using WinXCom being a Windows version of XCOM on the basis of mixture rule. The objective of this work is to show that there is a relation between effective atomic numbers and doped Ho fractions to InSe. © 2009 Elsevier B.V. All rights reserved.
dc.identifier.doi10.1016/j.nima.2008.12.144
dc.identifier.eissn1872-9576
dc.identifier.endpage639
dc.identifier.issn0168-9002
dc.identifier.issue3
dc.identifier.scopus2-s2.0-60449107526
dc.identifier.startpage635
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/16165
dc.identifier.volume600
dc.identifier.wosWOS:000264466400014
dc.language.isoen
dc.publisherELSEVIER
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectEffective atomic number
dc.subjectMass attenuation coefficients
dc.subjectSemiconductors
dc.subjectTransmission method
dc.subjectAtomic physics
dc.subjectCrystals
dc.subjectElectric conductivity
dc.subjectHolmium
dc.subjectRadiation
dc.subjectSemiconducting silicon compounds
dc.subjectSemiconductor materials
dc.subjectSugar (sucrose)
dc.subjectAbsorption edges
dc.subjectAtomic numbers
dc.subjectBridgman
dc.subjectEnergy regions
dc.subjectLayered semiconductors
dc.subjectSi detectors
dc.subjectWindows versions
dc.subjectAtoms
dc.titleMeasurement of efffective atomic numbers of holmium doped and undoped layered semiconductors via transmission method around the absorption edge
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus17
rdl.citation.wos16
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)