Dependence of characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts

We have formed Ni/n-Si SBDs contacts by dc magnetron sputtering Ni on the epitaxy n-type Si. We have introduced the temperature-dependent IV characteristics of the diodes in the temperature range of 60320 K. It has been seen that the BH values for the contacts formed by the evaporating or sputtering the metal are higher than that of the BH values for the contacts formed by the electro-deposition in the literature. The experimental nT versus T curve for the Ni/epitaxy n-Si Schottky diode has corresponded to an average ideality factor value of about 1.55 in the range of 240320 K and to field emission behavior in the range of 60240 K. Furthermore, we also have investigated the dependence of the reverse bias IV characteristics on the applied bias. The reverse bias IV curves computed by considering bias dependence of the BH exactly coincide with the experimental IV curves when the required equation is used in a given temperature. It has been concluded that the existence of BH inhomogeneity and the free carriers tunneling effect may offer the abnormal bias dependence of the experimental soft reverse characteristics. © 2010 Elsevier Ltd. All rights reserved.