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The Dependence of The Nickel Concentration of ZnO Thin Films for Gas Sensors Applications

ArticleAçık Erişim

Özet

Undoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using theSILAR method. The aim of this work is the analysis of NO gases using Zn1-xNixO sensorsconcentrations in the range from 100 ppb to 25 ppm. The gas sensing properties of the films forlow NO gas concentrations were carefully investigated within a temperature range from 35 to135ºC. The gas measurement results revealed that the doping process was strongly affected bythe response of Ni-doped ZnO thin films. The Zn0.75Ni0.25O sensor exhibited higher sensitivity,faster response, and recovery times for NO gas at low (100 ppb) concentration. It was concludedthat the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changingthe microstructure, morphology, and bandgap of ZnO material.

Anahtar Kelimeler

FizikUygulamalıNanobilim ve NanoteknolojiMühendislikKimya
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/18583Resmi atıflarda kullanılan kalıcı adres
Tam Kayıt
AlanDeğerDil
dc.contributor.authorAcar, Selim
dc.contributor.authorER, Irmak KARADUMAN
dc.contributor.authorYILDIRIM, Memet Ali
dc.contributor.authorSoltabayev, Baktiyar
dc.contributor.authorateş, aytunç
dc.date.accessioned2026-10-18T20:56:38.624435694Z
dc.date.available2026-10-18T20:56:38.624435694Z
dc.date.issued2021
dc.description.abstractUndoped ZnO and Ni-doped ZnO thin films were synthesized on glass substrate using theSILAR method. The aim of this work is the analysis of NO gases using Zn1-xNixO sensorsconcentrations in the range from 100 ppb to 25 ppm. The gas sensing properties of the films forlow NO gas concentrations were carefully investigated within a temperature range from 35 to135ºC. The gas measurement results revealed that the doping process was strongly affected bythe response of Ni-doped ZnO thin films. The Zn0.75Ni0.25O sensor exhibited higher sensitivity,faster response, and recovery times for NO gas at low (100 ppb) concentration. It was concludedthat the Ni dopant enhanced the properties of ZnO films for gas sensor applications by changingthe microstructure, morphology, and bandgap of ZnO material.
dc.identifier.eissn2147-9542
dc.identifier.endpage165
dc.identifier.issue1
dc.identifier.startpage157
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/18583
dc.identifier.volume8
dc.language.isoen
dc.relation.ispartofGazi University Journal of Science Part A: Engineering and Innovation
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectFizik
dc.subjectUygulamalı
dc.subjectNanobilim ve Nanoteknoloji
dc.subjectMühendislik
dc.subjectKimya
dc.titleThe Dependence of The Nickel Concentration of ZnO Thin Films for Gas Sensors Applications
dc.typeArticle
dspace.entity.typePublication
rdl.citation.trdizin1
rdl.departmentGAZİ ÜNİVERSİTESİ
rdl.departmentÇANKIRI KARATEKİN ÜNİVERSİTESİ
rdl.departmentERZİNCAN BİNALİ YILDIRIM ÜNİVERSİTESİ
rdl.departmentYabancı Kurumlar
rdl.departmentANKARA YILDIRIM BEYAZIT ÜNİVERSİTESİ
rdl.source.indexTRDIZIN