Growth, optical and electirical properties of in2Se3 thin films by the (SILAR) method

Indium selenide (In2Se3) thin films were grown on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) technique at room temperature. The In2Se3 thin films have been characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) for crystallographic and surface morphological properties. The band gaps of the films were determined by optical absorption measurements which were carried out in the temperature range 10-320K. It has been seen that, the band gap energies of the In2Se3 thin films are decreasing with increasing temperature. The electrical characterizations of the samples were done by two point probe current-voltage measurements which were carried out in the temperature range 300-450K. It has observed that the electrical resistivity decreased with increasing temperature. The electrical resistivity of the thin films were found 8×l04-2×l06 Ω cm at T=450K and T=300K, respectively. © 2007 American Institute of Physics.