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Effect of thickness on electrical properties of SILAR deposited SnS thin films

Conference ObjectAçık Erişim

Özet

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness. © 2016 AIP Publishing LLC.

Anahtar Kelimeler

electrical propertiessemiconductorsSnSthin films
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/15197Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1063/1.4944233Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorAkaltun, Yunus
dc.contributor.authorAstam, Aykut
dc.contributor.authorCerhan, Asena
dc.contributor.authorÇayir, Tuba
dc.contributor.editorB., Akkus
dc.contributor.editorG.S., Dogan
dc.contributor.editorR.B.C., Mutlu
dc.contributor.editorL.S., Yalcin
dc.contributor.editorY., Oktem
dc.date.accessioned2026-10-18T20:29:59.151098090Z
dc.date.available2026-10-18T20:29:59.151098090Z
dc.date.issued2016
dc.description.abstractTin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness. © 2016 AIP Publishing LLC.
dc.identifier.doi10.1063/1.4944233
dc.identifier.isbn978-073541369-6
dc.identifier.issn0094-243X
dc.identifier.scopus2-s2.0-84984537142
dc.identifier.startpage220001
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/15197
dc.identifier.volume1722
dc.identifier.wosWOS:000375923300114
dc.language.isoen
dc.publisherAmerican Institute of Physics Inc.
dc.relation.ispartofAIP Conference Proceedings
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectelectrical properties
dc.subjectsemiconductors
dc.subjectSnS
dc.subjectthin films
dc.titleEffect of thickness on electrical properties of SILAR deposited SnS thin films
dc.typeConference Object
dspace.entity.typePublication
rdl.citation.scopus5
rdl.citation.wos4
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexConference Proceedings Citation Index - Science (CPCI-S)