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A novel OTA-based circuit model corroborated by an experimental semiconductor memristor

ArticleAçık Erişim

Özet

A semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented. © 2018

Anahtar Kelimeler

MemristorMemristor emulatorOTAZinc oxideCircuit simulationII-VI semiconductorsMagnetic semiconductorsOperational amplifiersOxide semiconductorsReactive sputteringScanning electron microscopySemiconducting zinc compoundsTiming circuitsWide band gap semiconductorsX ray powder diffractionCircuit applicationDirect currentMemristive behaviorOperational transconductance amplifiers (OTA)OTA-based circuitTime-dependent currentsZnO thin filmMemristors
RDL Kalıcı Bağlantı (PID)
https://rdlopen.rawdatalibrary.net/r/ebyu/14045Resmi atıflarda kullanılan kalıcı adres
DOI
https://doi.org/10.1016/j.mee.2018.03.012Yayıncı resmi DOI adresi
Tam Kayıt
AlanDeğerDil
dc.contributor.authorGul, Fatih
dc.contributor.authorBabacan, Yunus
dc.date.accessioned2026-10-18T20:28:50.223048827Z
dc.date.available2026-10-18T20:28:50.223048827Z
dc.date.issued2018
dc.description.abstractA semiconductor memristor device based on a 300-nm ZnO thin film was fabricated by direct-current reactive sputter. The memristive behavior of this device was confirmed by time dependent current–voltage (I-V-t) measurements, and the distinctive pinched hysteresis I-V loops of the memristor were observed. Structural analysis of the ZnO memristor was carried out using both X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). After physical implementation of the memristor, an operational transconductance amplifier (OTA) based memristor circuit was designed to emulate the ZnO-based semiconductor memristor for use in memristor-based circuit applications. All simulations were in good agreement with experimental results. In addition, a comparison of the proposed circuit with other memristor emulators was presented. © 2018
dc.identifier.doi10.1016/j.mee.2018.03.012
dc.identifier.eissn1873-5568
dc.identifier.endpage60
dc.identifier.issn0167-9317
dc.identifier.scopus2-s2.0-85043985526
dc.identifier.startpage56
dc.identifier.urihttps://rdlopen.rawdatalibrary.net/r/ebyu/14045
dc.identifier.volume194
dc.identifier.wosWOS:000433265900010
dc.language.isoen
dc.publisherElsevier B.V.
dc.relation.ispartofMicroelectronic Engineering
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectMemristor
dc.subjectMemristor emulator
dc.subjectOTA
dc.subjectZinc oxide
dc.subjectCircuit simulation
dc.subjectII-VI semiconductors
dc.subjectMagnetic semiconductors
dc.subjectOperational amplifiers
dc.subjectOxide semiconductors
dc.subjectReactive sputtering
dc.subjectScanning electron microscopy
dc.subjectSemiconducting zinc compounds
dc.subjectTiming circuits
dc.subjectWide band gap semiconductors
dc.subjectX ray powder diffraction
dc.subjectCircuit application
dc.subjectDirect current
dc.subjectMemristive behavior
dc.subjectOperational transconductance amplifiers (OTA)
dc.subjectOTA-based circuit
dc.subjectTime-dependent currents
dc.subjectZnO thin film
dc.subjectMemristors
dc.titleA novel OTA-based circuit model corroborated by an experimental semiconductor memristor
dc.typeArticle
dspace.entity.typePublication
rdl.citation.scopus29
rdl.citation.wos27
rdl.source.indexSCOPUS
rdl.source.indexWOS
rdl.wos.indexScience Citation Index Expanded (SCI-EXPANDED)